Si1029x-t1-ge3 field effect transistor (MOSFET) Vishay original stock

SI1029X-T1-GE3

Specification information:

Manufacturer: Vishay

Product category: MOSFET

RoHS: Yes

Technology: Si

Installation style: SMD / SMT

Package / box: sc-89-6

Number of channels: 2 channels

Transistor polarity: n-channel, p-channel

VDS drain source breakdown voltage: 60 V

ID continuous drain current: 500 mA

RDS on drain source on resistance: 1.4 ohms, 4 ohms

VGS th gate source threshold voltage: 1 V

VGS - gate source voltage: 20 V

QG gate charge: 750 pc, 1700 PC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

PD power dissipation: 280 MW

Configuration: Dual

Channel mode: enhancement

Trade name: trench FET

Encapsulation: cut tape

Encapsulation: mousereel

Encapsulation: Reel

Height: 0.6 mm

Length: 1.66 mm

Series: SI1

Transistor type: 1 n-channel, 1 p-channel

Width: 1.2 mm

Trademark: Vishay / SILICONIX

Forward transconductance - Minimum: 200 ms, 100 ms

Product type: MOSFET

Factory packing quantity: 3000

Subcategory: MOSFETs

Typical shutdown delay time: 20 ns, 35 NS

Typical on delay time: 15 ns, 20 ns

Part number alias: si1029x-ge3

Unit weight: 32 mg