STP18N65M2 MOSFET ST original stock
STP18N65M2
Specification information:
Manufacturer: STMicroelectronics
Product type: MOSFET
RoHS: Yes
Technology: Si
Installation style: Through Hole
Package/box: TO-220-3
Number of channels: 1 channel
Transistor polarity: N-Channel
Vds drain source breakdown voltage: 650 V
Id - continuous drain current: 12 A
Rds On-drain source conduction resistance: 275 mOhms
Vgs th-gate source threshold voltage: 2 V
Vgs - grid - source voltage: 25 V
Qg-gate charge: 20 nC
Maximum operating temperature:+150 C
Pd-power dissipation: 110 W
Configuration: Single
Channel mode: Enhancement
Trade name: MDmesh
Encapsulation: Tube
Series: STP18N65M2
Transistor type: 1 N-Channel
Trademark: STMicroelectronics
Falling time: 12.5 ns
Product type: MOSFET
Rise time: 7.5 ns
Factory packing quantity: 1000
Subcategory: MOSFETs
Typical shutdown delay time: 46 ns
Typical connection delay time: 11 ns
Unit weight: 330 mg
Specification information:
Manufacturer: STMicroelectronics
Product type: MOSFET
RoHS: Yes
Technology: Si
Installation style: Through Hole
Package/box: TO-220-3
Number of channels: 1 channel
Transistor polarity: N-Channel
Vds drain source breakdown voltage: 650 V
Id - continuous drain current: 12 A
Rds On-drain source conduction resistance: 275 mOhms
Vgs th-gate source threshold voltage: 2 V
Vgs - grid - source voltage: 25 V
Qg-gate charge: 20 nC
Maximum operating temperature:+150 C
Pd-power dissipation: 110 W
Configuration: Single
Channel mode: Enhancement
Trade name: MDmesh
Encapsulation: Tube
Series: STP18N65M2
Transistor type: 1 N-Channel
Trademark: STMicroelectronics
Falling time: 12.5 ns
Product type: MOSFET
Rise time: 7.5 ns
Factory packing quantity: 1000
Subcategory: MOSFETs
Typical shutdown delay time: 46 ns
Typical connection delay time: 11 ns
Unit weight: 330 mg