Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering them suitable for the most demanding high
efficiency converters.
Features
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters