Ao3400a field effect transistor (MOSFET) original stock
AO3400A
Specification information:
Series: Ao
FET type: n-channel
Technology: MOSFET (metal oxide)
Current continuous drain (ID) (at 25 ° C): 5.7a (TA)
Driving voltage (maximum RDSON, minimum RDSON): 2.5V, 10V
VGS (th) (max.) at different IDS: 1.5V @ 250 µ a
Gate charge at different VGS (QG) (max): 7NC @ 4.5V
Input capacitance at different VDS (CISS) (maximum): 630pf @ 15V
VGS (max): ± 12V
Power dissipation (maximum): 1.4W (TA)
RDSON at different ID and VGS (maximum): 26.5 milliohm @ 5.7a, 10V
Operating temperature: - 55 ° C ~ 150 ° C (TJ)
Installation type: Surface Mount
Package / enclosure: to-236-3, sc-59, sot-23-3
Package: SOT-23
Polarity: N-ch
Drain source breakdown voltage VDSS: 30V
Continuous drain current ID: 5.7a
Lead free condition / RoHS: lead free / RoHS compliant
Specification information:
Series: Ao
FET type: n-channel
Technology: MOSFET (metal oxide)
Current continuous drain (ID) (at 25 ° C): 5.7a (TA)
Driving voltage (maximum RDSON, minimum RDSON): 2.5V, 10V
VGS (th) (max.) at different IDS: 1.5V @ 250 µ a
Gate charge at different VGS (QG) (max): 7NC @ 4.5V
Input capacitance at different VDS (CISS) (maximum): 630pf @ 15V
VGS (max): ± 12V
Power dissipation (maximum): 1.4W (TA)
RDSON at different ID and VGS (maximum): 26.5 milliohm @ 5.7a, 10V
Operating temperature: - 55 ° C ~ 150 ° C (TJ)
Installation type: Surface Mount
Package / enclosure: to-236-3, sc-59, sot-23-3
Package: SOT-23
Polarity: N-ch
Drain source breakdown voltage VDSS: 30V
Continuous drain current ID: 5.7a
Lead free condition / RoHS: lead free / RoHS compliant