M25p32-vmw6tgtr soic-8 flash memory sold at a low price
Functional Description
The M25P80 is an 8Mb (1Mb x 8) serial Flash memory device with advanced write pro
tection mechanisms accessed by a high speed SPI-compatible bus. The device supports
high-performance commands for clock frequency up to 75 MHz.
The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM
command. It is organized as 16 sectors, each containing 256 pages. Each page is 256
bytes wide. Memory can be viewed either as 4096 pages or as 1,048,576 bytes. The entire
memory can be erased using the BULK ERASE command, or it can be erased one sector
at a time using the SECTOR ERASE command.
This data sheet details the functionality of the M25P80 device based on 110nm process.
Features
• SPI bus-compatible serial interface• 8Mb Flash memory
• 75 MHz clock frequency (maximum)
• 2.7V to 3.6V single supply voltage
• Page program (up to 256 bytes) in 0.64ms (TYP)
• Erase capability
– Sector erase: 512Kb in 0.6 s (TYP)
– Bulk erase: 8Mb in 8 s (TYP)
• Write protection
– Hardware write protection: protected area size
defined by nonvolatile bits BP0, BP1, BP2
• Deep power-down: 1µA (TYP)
• Electronic signature
– JEDEC-standard 2-byte signature (2014h)
– Unique ID code (UID) and 16 bytes of common
Flash interface (CFI) data
– RES command, one-byte signature (13h) for
backward compatibility
• More than 100,000 write cycles per sector
• More than 20 years data retention
• Automotive-grade parts available
• Packages (RoHS-compliant)
– SO8N (MN) 150 mils
– SO8W (MW) 208 mils
– VFDFPN8 (MP) MLP8 6mm x 5mm
– UFDFPN8 (MC) MLP8 4mm x 3mm
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