Ucc27531dbvr gate driver IC Ti price advantage
explain
Ucc27531-q1 is a single channel, high-speed, gate driver, which can effectively drive metal oxide semiconductor field effect transistor (MOSFET) and IGBT power switch with the help of up to 2.5A source current and 5A sink current (asymmetric drive) peak current. The absorption capacity in the strong asymmetric drive improves the ability to resist the parasitic Miller switching on effect.
Ucc27531-q1 device also has a separate output configuration, in which the gate drive current is pulled out from the outh pin and poured in from the outl pin. This unique pin arrangement enables the user to use independent on and off resistors on the outh and outl pins respectively, and can easily control the conversion rate of the switch. The driver has rail to rail driving capability and a typical minimum propagation delay of 17 ns.
The input threshold of ucc27531-q1 is based on the low-voltage logic circuit compatible with TTL and COMS. This logic circuit is fixed and independent of VDD supply voltage. 1V hysteresis typical provides excellent immunity.
characteristic
• meet automotive application requirements
• have the following results according to aec-q100:
– device temperature level 1
– device manikin (HBM) electrostatic discharge (ESD) classification class H2
– device charger model (CDM) ESD classification class C4B
• low cost gate driver (best solution for driving FET and IGBT)
• an excellent alternative to discrete transistor pair drives (providing easy docking with controllers)
• TTL and CMOS compatible input logic thresholds (independent of supply voltage)
• separate output option for on and off current regulation
• reverse and non reverse input configurations
• enabled by fixed TTL compatibility threshold
• high 2.5A source current and 2.5A or 5A peak drive current at 18V VDD
• wide VDD range from 10V to up to 35V
• input and enable pins capable of withstanding a DC voltage up to 5V lower than ground
• when the input is suspended or VDD undervoltage lockout (UVLO), the output remains low
• fast propagation delay (typical 17ns)
• fast rise and fall time (typical values at 1800pf load are 15ns and 7ns respectively)
• undervoltage lockout (UVLO)
• used as high side or low side driver (if appropriate bias and signal isolation design is adopted)
• low cost, space saving 6-pin dbv (small overall size transistor (SOT) - 23) package option
• operating temperature range from - 40 ° C to 140 ° C
Scope of application
• on board
• switching mode power supply
• DC to DC converter
• solar inverter, motor control, uninterruptible power supply (UPS)
• hybrid electric vehicle (HEV) and electric vehicle (EV) chargers
• household appliances
• renewable energy power conversion
• SiC FET converter
Ucc27531-q1 is a single channel, high-speed, gate driver, which can effectively drive metal oxide semiconductor field effect transistor (MOSFET) and IGBT power switch with the help of up to 2.5A source current and 5A sink current (asymmetric drive) peak current. The absorption capacity in the strong asymmetric drive improves the ability to resist the parasitic Miller switching on effect.
Ucc27531-q1 device also has a separate output configuration, in which the gate drive current is pulled out from the outh pin and poured in from the outl pin. This unique pin arrangement enables the user to use independent on and off resistors on the outh and outl pins respectively, and can easily control the conversion rate of the switch. The driver has rail to rail driving capability and a typical minimum propagation delay of 17 ns.
The input threshold of ucc27531-q1 is based on the low-voltage logic circuit compatible with TTL and COMS. This logic circuit is fixed and independent of VDD supply voltage. 1V hysteresis typical provides excellent immunity.
characteristic
• meet automotive application requirements
• have the following results according to aec-q100:
– device temperature level 1
– device manikin (HBM) electrostatic discharge (ESD) classification class H2
– device charger model (CDM) ESD classification class C4B
• low cost gate driver (best solution for driving FET and IGBT)
• an excellent alternative to discrete transistor pair drives (providing easy docking with controllers)
• TTL and CMOS compatible input logic thresholds (independent of supply voltage)
• separate output option for on and off current regulation
• reverse and non reverse input configurations
• enabled by fixed TTL compatibility threshold
• high 2.5A source current and 2.5A or 5A peak drive current at 18V VDD
• wide VDD range from 10V to up to 35V
• input and enable pins capable of withstanding a DC voltage up to 5V lower than ground
• when the input is suspended or VDD undervoltage lockout (UVLO), the output remains low
• fast propagation delay (typical 17ns)
• fast rise and fall time (typical values at 1800pf load are 15ns and 7ns respectively)
• undervoltage lockout (UVLO)
• used as high side or low side driver (if appropriate bias and signal isolation design is adopted)
• low cost, space saving 6-pin dbv (small overall size transistor (SOT) - 23) package option
• operating temperature range from - 40 ° C to 140 ° C
Scope of application
• on board
• switching mode power supply
• DC to DC converter
• solar inverter, motor control, uninterruptible power supply (UPS)
• hybrid electric vehicle (HEV) and electric vehicle (EV) chargers
• household appliances
• renewable energy power conversion
• SiC FET converter