Stp24n60dm2 field effect transistor (MOSFET) original stock
STP24N60DM2
Specification information:
Manufacturer: STMICROELECTRONICS
Product category: MOSFET
RoHS: Yes
Technology: Si
Installation style: through hole
Package / box: to-220-3
Number of channels: 1 channel
Transistor polarity: n-channel
VDS drain source breakdown voltage: 600 V
ID continuous drain current: 18 A
RDS on drain source on resistance: 200 MOhms
VGS th gate source threshold voltage: 4 V
VGS - grid source voltage: 25 V
QG gate charge: 29 NC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
PD power dissipation: 150 W
Configuration: single
Trade name: fdmesh
Encapsulation: tube
Series: stp24n60dm2
Transistor type: n-1
Trademark: STMICROELECTRONICS
Descent time: 15 NS
Product type: MOSFET
Rise time: 8.7 NS
Factory packing quantity: 1000
Subcategory: MOSFETs
Typical closing delay time: 60 ns
Typical on delay time: 15 NS
Unit weight: 330 mg
Specification information:
Manufacturer: STMICROELECTRONICS
Product category: MOSFET
RoHS: Yes
Technology: Si
Installation style: through hole
Package / box: to-220-3
Number of channels: 1 channel
Transistor polarity: n-channel
VDS drain source breakdown voltage: 600 V
ID continuous drain current: 18 A
RDS on drain source on resistance: 200 MOhms
VGS th gate source threshold voltage: 4 V
VGS - grid source voltage: 25 V
QG gate charge: 29 NC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
PD power dissipation: 150 W
Configuration: single
Trade name: fdmesh
Encapsulation: tube
Series: stp24n60dm2
Transistor type: n-1
Trademark: STMICROELECTRONICS
Descent time: 15 NS
Product type: MOSFET
Rise time: 8.7 NS
Factory packing quantity: 1000
Subcategory: MOSFETs
Typical closing delay time: 60 ns
Typical on delay time: 15 NS
Unit weight: 330 mg