Irfb7430pbf MOSFET in stock

Irfb7430pbf

Specification information:

Package / housing: to220

FET type: n-channel

Technology: MOSFET (metal oxide)

Drain source voltage (VDSS): 40V

Current continuous drain (ID) (at 25 ° C): 195a (TC)

Driving voltage (maximum RDS on, minimum RDS on): 6V, 10V

RDS on with different ID and VGS: 1.3 milliohm @ 100A, 10V

VGS (th) at different IDS (max.): 3.9v @ 250 µ a

Gate charge at different VGS (QG) (maximum): 460nc @ 10V

VGS (max): ± 20V

Input capacitance at different VDS (CISS) (maximum): 14240pf @ 25V

Power dissipation (max.): 375W (TC)

Operating temperature: - 55 ° C ~ 175 ° C (TJ)

Installation type: through hole

Series: hexfet ®， StrongIRFET ™

FET type: n-channel

Current continuous drain (ID) (at 25 ° C): 195a (TC)

Driving voltage (maximum RDSON, minimum RDSON): 6V, 10V

VGS (th) (max.) at different IDS: 3.9v @ 250 µ a

Gate charge at different VGS (QG) (maximum): 460nc @ 10V

Input capacitance at different VDS (CISS) (maximum): 14240pf @ 25V

RDSON (max.) with different ID and VGS: 1.3 milliohm @ 100A, 10V

Package: TO-220AB

Polarity: N-ch

Drain source breakdown voltage vdss:40v

Continuous drain current ID: 409a

Supplier's device packaging: TO-220AB

Lead free condition / RoHS: lead free / RoHS compliant